smd type transistors 1 emitter 2 base 3 collector 2SD1821 features high collector-emitter voltage v ceo low noise voltage nv absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v peak collector current i cp 100 a collector current i c 50 a collector power dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c = 100 a, i b = 0 150 v emitter-base voltage v ebo i e =10a,i c =0 5 v collector-base cutoff current i cbo v cb = 100 v, i e =0 1 a forward current transfer ratio h fe v ce =5v,i c = 10 ma 130 330 collector-emitter saturation voltage v ce(sat) i c =30ma,i b =3ma v transition frequency f t v cb =10v,i e = -10 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 2.3 pf noixe voltage nv v ce =10v,i c =1ma,g v =80db,r g = 100k , function = flat 150 mv h fe classification marking rank q r h fe 130 220 185 330 p sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type ic smd type transistors smd type smd type product specification 4008-318-123
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